Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

This paper presents the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11] and hydrogen plasma at temperatures between 50 and 110 °C. X-ray photoelectron spectroscopy measurements could show that the deposited cobalt is in the metallic state and the established process shows a homogeneous coating at the wafer level.

ALPIN workshop 2023 – Student award survey

Please vote for the best student contribution and the best student paper of this year’s ALPIN workshop. Note: Try to be objective and fair and really choose the best presentation in your opinion (not the person). The prizes for the student awards 2023 are sponsored by ALS Metrology (https://als-metrology.de/) – your partner for in situ … Weiterlesen

EFDS ALD for Industry 2023

Der diesjährige ALD for Industry Workshop war wie schon in den vergangenen Jahren ein voller Erfolg, dank der EFDS sehr gut organisiert und voller interessanter Vorträge, Diskussionen und Gespräche. Nachfolgend gibt es eine Auswahl an Fotos von der Veranstaltung und wer alle Fotos sehen möchte, kann dies über folgendem Link: https://www.katharinaknaut.com/index.php?seite=archiv&name=2023EFDS Am 21. und 22. … Weiterlesen

In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride

Controlled thin film etching is essential for future semiconductor devices, especially with complex high aspect ratio structures. Therefore, self-limiting atomic layer etching processes are of great interest to the semiconductor industry. In this work, a process for atomic layer etching of aluminum oxide (Al2O3) films using sequential and self-limiting thermal reactions with trimethylaluminum and hydrogen fluoride as reactants was demonstrated.