Simulation

Low-temperature ALD of metallic cobalt using the CoCOhept precursor: Simulation-assisted process development for deposition on temperature sensitive 3D-structures

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This work presents the development and implementation of a low-temperature atomic layer deposition (ALD) process for metallic cobalt thin films. The works are based on a set of five different Co precursors with alkyne ligands.

Modeling the impact of incomplete conformality during atomic layer processing

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We present a model for surface coverage during ALD to include precursor desorption from the surface, which leads to incomplete conformality. The model combines existing Knudsen diffusion and Langmuir kinetics methods and includes the Bosanquet formula for gas-phase diffusivity and reaction reversibility.