Atomic Layer Process Innovation Network
We present a model for surface coverage during ALD to include precursor desorption from the surface, which leads to incomplete conformality. The model combines existing Knudsen diffusion and Langmuir kinetics methods and includes the Bosanquet formula for gas-phase diffusivity and reaction reversibility.
This paper presents the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11] and hydrogen plasma at temperatures between 50 and 110 °C. X-ray photoelectron spectroscopy measurements could show that the deposited cobalt is in the metallic state and the established process shows a homogeneous coating at the wafer level.