ALPIN workshop 2023 – Student award survey

Please vote for the best student contribution and the best student paper of this year’s ALPIN workshop. Note: Try to be objective and fair and really choose the best presentation in your opinion (not the person). The prizes for the student awards 2023 are sponsored by ALS Metrology ( – your partner for in situ … Weiterlesen

EFDS ALD for Industry 2023

Der diesjährige ALD for Industry Workshop war wie schon in den vergangenen Jahren ein voller Erfolg, dank der EFDS sehr gut organisiert und voller interessanter Vorträge, Diskussionen und Gespräche. Nachfolgend gibt es eine Auswahl an Fotos von der Veranstaltung und wer alle Fotos sehen möchte, kann dies über folgendem Link: Am 21. und 22. … Weiterlesen

In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride

Controlled thin film etching is essential for future semiconductor devices, especially with complex high aspect ratio structures. Therefore, self-limiting atomic layer etching processes are of great interest to the semiconductor industry. In this work, a process for atomic layer etching of aluminum oxide (Al2O3) films using sequential and self-limiting thermal reactions with trimethylaluminum and hydrogen fluoride as reactants was demonstrated.

Characteristics of ALD-ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen Sources

Jun Yang, Amin Bahrami, Xingwei Ding, Sebastian Lehmann, Nadine Kruse, Shiyang He, Bowen Wang, Martin Hantusch, Kornelius Nielsch ZnO thin films are deposited by atomic layer deposition (ALD) using diethylzinc as the Zn source and H2O and H2O2 as oxygen sources. The oxidant- and temperature-dependent electrical properties and growth characteristics are systematically investigated. Materials analysis … Weiterlesen

Surface Modification of Bismuth by ALD of Antimony Oxide for Suppressing Lattice Thermal Conductivity

Surface modification may significantly improve the performance of thermoelectric materials by suppressing thermal conductivity. Using the powder atomic layer deposition method, the newly developed Sb2O5 thin films produced from SbCl5 and H2O2 were formed on the surfaces of Bi powders. Because of the high thermal resistance generated by Sb2O5 layers on Bi particles, a substantial decrease in κtot from 7.8 to 5.7 W m–1 K–1 was obtained with just 5 cycles of Sb2O5 layer deposition and a 16% reduction in κlat. Because of the strong phonon scattering, the maximum zT values increased by around 12% and were relocated to 423 K.