Atomic Layer Process Innovation Network
We present a model for surface coverage during ALD to include precursor desorption from the surface, which leads to incomplete conformality. The model combines existing Knudsen diffusion and Langmuir kinetics methods and includes the Bosanquet formula for gas-phase diffusivity and reaction reversibility.
The 7th International Conference „ALD FOR INDUSTRY“ will again bridge the gap between fundamental science, industrialization and commercialization of this technology. This event is already establied since 2016 and attracts annually more than 100 participants and numerous exhibitors to visit Dresden. The Conference with Tutorial provides the opportunity to learn more about fundamentals of ALD technology, to get informed about recent progress in the field and to get in contact with industrial and academic partners.
Der diesjährige ALPIN-Workshop wird am 11. und 12. September 2023 in der Alten Aktienspinnerei in Chemnitz stattfinden. Organisiert wird der Workshop dieses Jahr von den Kollegen am Fraunhofer ENAS und der TU Chemnitz.
Der diesjährige ALD for Industry Workshop war wie schon in den vergangenen Jahren ein voller Erfolg, dank der EFDS sehr gut organisiert und voller interessanter Vorträge, Diskussionen und Gespräche. Nachfolgend gibt es eine Auswahl an Fotos von der Veranstaltung und wer alle Fotos sehen möchte, kann dies über folgendem Link: https://www.katharinaknaut.com/index.php?seite=archiv&name=2023EFDS Am 21. und 22. … Weiterlesen
Nur noch eine Woche bis zum diesjährigen ALPIN-Workshop – hier gibt es das Programm mit den geplanten Vorträgen. / Only one week to go until this year’s ALPIN workshop – check out the agenda with the planned talks.
Controlled thin film etching is essential for future semiconductor devices, especially with complex high aspect ratio structures. Therefore, self-limiting atomic layer etching processes are of great interest to the semiconductor industry. In this work, a process for atomic layer etching of aluminum oxide (Al2O3) films using sequential and self-limiting thermal reactions with trimethylaluminum and hydrogen fluoride as reactants was demonstrated.