PEALD

Low-temperature ALD of metallic cobalt using the CoCOhept precursor: Simulation-assisted process development for deposition on temperature sensitive 3D-structures

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This work presents the development and implementation of a low-temperature atomic layer deposition (ALD) process for metallic cobalt thin films. The works are based on a set of five different Co precursors with alkyne ligands.

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

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This paper presents the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11] and hydrogen plasma at temperatures between 50 and 110 °C. X-ray photoelectron spectroscopy measurements could show that the deposited cobalt is in the metallic state and the established process shows a homogeneous coating at the wafer level.