Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

This paper presents the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11] and hydrogen plasma at temperatures between 50 and 110 °C. X-ray photoelectron spectroscopy measurements could show that the deposited cobalt is in the metallic state and the established process shows a homogeneous coating at the wafer level.