Atomic Layer Process Innovation Network
Dear ALPIN Community, we cordially invite you to this year’s the Atomic Layer Process Innovation Network (ALPIN) Workshop. It will take place on September 2–3, 2025 in Gießen, Germany. The event is organized by Dr. Philip Klement and Prof. Sangam Chatterjee at the Institute of Experimental Physics I, Justus Liebig University. The workshop will cover … Weiterlesen
Welcome to the ALP workshop at FTME 2025, where we dive into cutting-edge Atomic Layer Processing techniques that are enabling modern microelectronics manufacturing. This workshop will take place on Tuesday, February 11, 2025, as part of the ForLab Microelectronics Symposium at TU Ilmenau. Workshop agenda: 09:00 Welcome (Martin Knaut, TU Dresden)09:05 The current status of … Weiterlesen
The 7th International Conference „ALD FOR INDUSTRY“ will again bridge the gap between fundamental science, industrialization and commercialization of this technology. This event is already establied since 2016 and attracts annually more than 100 participants and numerous exhibitors to visit Dresden. The Conference with Tutorial provides the opportunity to learn more about fundamentals of ALD technology, to get informed about recent progress in the field and to get in contact with industrial and academic partners.
Der diesjährige ALPIN-Workshop wird am 11. und 12. September 2023 in der Alten Aktienspinnerei in Chemnitz stattfinden. Organisiert wird der Workshop dieses Jahr von den Kollegen am Fraunhofer ENAS und der TU Chemnitz.
Nur noch eine Woche bis zum diesjährigen ALPIN-Workshop – hier gibt es das Programm mit den geplanten Vorträgen. / Only one week to go until this year’s ALPIN workshop – check out the agenda with the planned talks.
Controlled thin film etching is essential for future semiconductor devices, especially with complex high aspect ratio structures. Therefore, self-limiting atomic layer etching processes are of great interest to the semiconductor industry. In this work, a process for atomic layer etching of aluminum oxide (Al2O3) films using sequential and self-limiting thermal reactions with trimethylaluminum and hydrogen fluoride as reactants was demonstrated.